None
1 Year
Interface
Dimension
Weight
Capacity
SDram
Flash Type
Sequential Read
Sequential Write
4KB Random Read IOPS
4KB Random Write IOPS
Power Supply
Standby
Maximum Ripple
4KB Random Write
Write endurance: 2,139 TBW at 0.36 drive write per day
Read endurance: unlimited
MTBF: 2,000,000 hours
Data retention: >20year @ 25℃
Data destroy not supported
Sudden power-off recovery support
S.M.A.R.T., NCQ, Trim and dynamic power management support
Static and dynamic wear-leveling
Bad block management algorithm
Storage temperature: -55~95℃
Operation temperature: -0~75℃
Humidity: 5%~95%
Vibration
Shock
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